Samsung MZ-V6E1T0 Manual de usuario descargar pdf (Pagina 8)

Samsung Electronics Co., Ltd.

129 Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do 16677, Korea www.samsung.com 2017-08

For more information

For more information about the Samsung NVMe SSD, visit www.samsungssd.com.

Copyright © 2017 Samsung Electronics Co., Ltd. All rights reserved. Samsung is a registered trademark of Samsung Electronics Co., Ltd. Specications and designs are subject to change without notice. Nonmetric

weights and measurements are approximate. All data were deemed correct at time of creation. Samsung is not liable for errors or omissions. All brand, product, service names and logos are trademarks and/or

registered trademarks of their respective owners and are hereby recognized and acknowledged.

Microsoft and Windows are registered trademarks of Microsoft Corporation in the United States and/or other countries. NVMe is a trademark of the NVM Express Organization. PCI, PCI Express and PCIe are

trademarks or registered trademarks of PCI-SIG.

1. 1 GB=1,000,000,000 bytes by IDEMA. A certain portion of capacity may be used for system le and maintenance use, so the actual capacity may differ from what is indicated on

the product label.

2. M.2 is a specication of form factor for ultra-thin PCs. The M.2 standard allows widths 12, 16, 22 and 30 mm and lengths of 16, 26, 30, 38, 42, 69, 80 and 110 mm, Commercially M.2

is popular with width 22 mm and lengths 30, 42, 60, 80 and 110 mm. Samsung provides the most popular form factor with 22 mm x 80 mm model (i.e., 2280) for user convenience.

3. Sequential performance measurements based on CrystalDiskMark 5.1.2, and random performance measurements based on Iometer 1.1.0. Performance may vary based on SSD’s

rmware version, system hardware & conguration. Test system conguration: Intel

Core i7-6700K @ 4.0 GHz, DDR4 1,700 MHz 16 GB, OS – Windows

10 Pro x64, ASROCK™

Z170 EXTREME 7 For 960 EVO, sequential write performance measurements based on TurboWrite technology. These sequential write performance after TurboWrite region are

300 MB/s (250 GB), 600 MB/s (500 GB) and 1,200 MB/s (1 TB). Random write performance measurements based on TurboWrite technology. These random write performance

after TurboWrite region are 80,000 IOPS (250 GB), 160,000 IOPS (500 GB) and 300,000 IOPS (1 TB).

4. Power consumption measured with IOmeter 1.1.0 with Intel i7-5820K @ 3.3 GHz, DDR4 8 GB, ASUS

x99-M WS/SE, OS-Windows10 Pro x64 and APST on.

5. TBW means Terabytes Written.

About Samsung Electronics Co., Ltd.

Samsung Electronics Co., Ltd. inspires the world and shapes the future with transformative ideas and technologies. The company is redefining the worlds of TVs,

smartphones, wearable devices, tablets, cameras, digital appliances, printers, medical equipment, network systems, and semiconductor and LED solutions. For the latest

news, please visit the Samsung Newsroom at news.samsung.com.

960 PRO 960 EVO

Usage application Client PCs

Interface PCIe Gen 3.0 x4, NVMe 1.2

Hardware

information

Model name MZ-V6P512 MZ-V6P1T0 MZ-V6P2T0 MZ-V6E250 MZ-V6E500 MZ-V6E1T0

Capacity

512 GB 1 TB (1,024 GB) 2 TB (2,048 GB) 250 GB 500 GB 1 TB (1,000 GB)

Controller Samsung Polaris Controller

NAND ash memory Samsung V-NAND ash memory Samsung V-NAND 3bit MLC ash memory

DRAM cache memory 512 MB LP DDR3 1 GB LP DDR3 2 GB LP DDR3 512 MB LP DDR3 1 GB LP DDR3

Dimension Max. 80.15 x 22.15 x 2.38 (mm)

Form-factor M.2 (2280)

Performance

(Max.)

Sequential read 3,500 MB/s 3,200 MB/s

Sequential write

2,100 MB/s 1,500 MB/s 1,800 MB/s 1,900 MB/s

Random read (QD1, Thread1) 14K IOPS 14K IOPS

Random write (QD1, Thread1) 50K IOPS 50K IOPS

Random read (QD32, Thread4) 330K IOPS 440K IOPS 440K IOPS 330K IOPS 330K IOPS 380K IOPS

Random write (QD32, Thread4) 330K IOPS 360K IOPS 360K IOPS 300K IOPS 330K IOPS 360K IOPS

Power

consumption

Idle (Typ.) 40 mW 40 mW

Active read (Average, Typ.) 5.1 W 5.3 W 5.8 W 5.3 W 5.4 W 5.7 W

Active write (Average, Typ.) 4.7 W 5.2 W 5.2 W 4.2 W 4.4 W 4.8 W

DEVSLP (L1.2 mode, Typ.) 5 mW 5 mW 8 mW 5 mW

Data security AES 256-bit for user data encryption, TCG/Opal

Supporting features TRIM (Required OS support), Garbage Collection, S.M.A.R.T

Temperature

Operating 0 ~ 70°C

Non-operating -45 ~ 85°C

Humidity 5% to 95%, non-condensing

Shock Non-operating 1,500G, duration: 0.5ms, 3 axis

Vibration Non-operating 20 ~ 2,000Hz, 20G

Reliability MTBF 1.5 million hours

Weight (Max.) 8.3 g 8.5 g 9 g 7.7 g 8 g 8 g

Warranty

Total Bytes Written 400 TBW

800 TBW 1,200 TBW 100 TBW 200 TBW 400 TBW

Period 5-year limited 3-year limited

Technical specifications

1 2 3 4 5 6 7 8

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